Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
storage temperature
junction temperature
up to T
s
= 80
°C;
note 1
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−65
−
MIN.
BFG591
MAX.
20
15
3
200
2
+150
150
UNIT
V
V
V
mA
W
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to
soldering point
note 1
CONDITIONS
VALUE
35
UNIT
K/W
Note to the Limiting values and Thermal characteristics
1. T
s
is the temperature at the soldering point of the collector pin.
1995 Sep 04
3
PHILIPS [ NXP SEMICONDUCTORS ]
