Philips Semiconductors
Product specification
NPN 7 GHz wideband transistor
FEATURES
•
High power gain
•
Low noise figure
•
High transition frequency
•
Gold metallization ensures
excellent reliability.
APPLICATIONS
Intended for applications in the GHz
range such as MATV or CATV
amplifiers and RF communications
subscriber equipment.
PINNING
PIN
1
2
3
4
base
emitter
collector
DESCRIPTION
emitter
1
Top view
BFG591
DESCRIPTION
NPN silicon planar epitaxial transistor
in a plastic, 4-pin SOT223 package.
fpage
4
2
3
MSB002 - 1
Fig.1 SOT223.
QUICK REFERENCE DATA
SYMBOL
V
CBO
V
CEO
I
C
P
tot
h
FE
C
re
f
T
G
UM
s
21
Note
1. T
s
is the temperature at the soldering point of the collector pin.
2
PARAMETER
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
feedback capacitance
transition frequency
maximum unilateral
power gain
insertion power gain
open base
CONDITIONS
open emitter
−
−
−
up to T
s
= 80
°C;
note 1
I
C
= 70 mA; V
CE
= 8 V
I
C
= I
c
= 0; V
CE
= 12 V; f = 1 MHz
I
C
= 70 mA; V
CE
= 12 V; f = 1 GHz
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
°C
I
C
= 70 mA; V
CE
= 12 V;
f = 900 MHz; T
amb
= 25
°C
−
MIN.
−
−
−
−
TYP.
MAX.
20
15
200
2
250
−
−
−
−
V
V
UNIT
mA
W
pF
GHz
dB
dB
60
−
−
−
−
90
0.7
7
13
12
1995 Sep 04
2
PHILIPS [ NXP SEMICONDUCTORS ]
