Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MLC045
MLC046
30
30
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
20
20
10
MSG
G
max
G
UM
G
G
max
UM
10
0
0
0
0
10
20
30
40
50
(mA)
10
20
30
40
50
(mA)
I
I
C
C
f = 900 MHz; VCE = 8 V.
f = 2 GHz; VCE = 8 V.
Fig.7 Gain as a function of collector current;
typical values.
Fig.8 Gain as a function of collector current;
typical values.
MLC047
MLC048
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
G
UM
UM
40
30
20
10
0
40
30
20
10
0
MSG
MSG
G
G
max
max
2
3
4
2
3
4
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 10 mA; VCE = 8 V.
IC = 40 mA; VCE = 8 V.
Fig.9 Gain as a function of frequency;
typical values.
Fig.10 Gain as a function of frequency;
typical values.
1997 Dec 04
6
NXP [ NXP ]
