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BFG540W/X 参数 Datasheet PDF下载

BFG540W/X图片预览
型号: BFG540W/X
PDF下载: 下载PDF文件 查看货源
内容描述: NPN 9 GHz宽带晶体管 [NPN 9 GHz wideband transistor]
分类和应用: 晶体晶体管
文件页数/大小: 16 页 / 166 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
BFG540W  
BFG540W/X; BFG540W/XR  
NPN 9 GHz wideband transistor  
MEA973  
MEA972  
20  
20  
handbook, halfpage  
handbook, halfpage  
d
d
im  
2
(dB)  
(dB)  
30  
30  
40  
50  
40  
50  
60  
70  
60  
70  
10  
20  
30  
40  
50  
60  
(mA)  
10  
20  
30  
40  
50  
60  
(mA)  
I
I
C
C
Vo = 500 mV; f(p + q r) = 793.25 MHz; VCE = 8 V; Tamb = 25 °C;  
RL = 75 .  
Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 .  
Fig.11 Intermodulation distortion as a function  
of collector current; typical values.  
Fig.12 Second order intermodulation distortion as a  
function of collector current; typical values.  
MRA760  
MLC049  
5
20  
G
4
handbook, halfpage  
handbook, halfpage  
F
ass  
min  
(dB)  
F
(dB)  
f = 900 MHz  
1000 MHz  
(dB)  
15  
4
3
G
F
ass  
2000 MHz  
f = 2000 MHz  
2
10  
5
3
2
1
2000 MHz  
1000 MHz  
900 MHz  
min  
1000 MHz  
900 MHz  
500 MHz  
500 MHz  
1
0
0
0
1
5  
10  
2
1
10  
10  
2
10  
I
(mA)  
C
I
(mA)  
C
VCE = 8 V.  
VCE = 8 V.  
Fig.13 Minimum noise figure as a function of  
collector current; typical values.  
Fig.14 Associated available gain as a function of  
collector current; typical values.  
1997 Dec 04  
7