Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MEA973
MEA972
−20
−20
handbook, halfpage
handbook, halfpage
d
d
im
2
(dB)
(dB)
−30
−30
−40
−50
−40
−50
−60
−70
−60
−70
10
20
30
40
50
60
(mA)
10
20
30
40
50
60
(mA)
I
I
C
C
Vo = 500 mV; f(p + q − r) = 793.25 MHz; VCE = 8 V; Tamb = 25 °C;
RL = 75 Ω.
Vo = 275 mV; f(p + q) = 810 MHz; VCE = 8 V; Tamb = 25 °C; RL = 75 Ω.
Fig.11 Intermodulation distortion as a function
of collector current; typical values.
Fig.12 Second order intermodulation distortion as a
function of collector current; typical values.
MRA760
MLC049
5
20
G
4
handbook, halfpage
handbook, halfpage
F
ass
min
(dB)
F
(dB)
f = 900 MHz
1000 MHz
(dB)
15
4
3
G
F
ass
2000 MHz
f = 2000 MHz
2
10
5
3
2
1
2000 MHz
1000 MHz
900 MHz
min
1000 MHz
900 MHz
500 MHz
500 MHz
1
0
0
0
1
−5
10
2
1
10
10
2
10
I
(mA)
C
I
(mA)
C
VCE = 8 V.
VCE = 8 V.
Fig.13 Minimum noise figure as a function of
collector current; typical values.
Fig.14 Associated available gain as a function of
collector current; typical values.
1997 Dec 04
7
NXP [ NXP ]
