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BFG540W/X 参数 Datasheet PDF下载

BFG540W/X图片预览
型号: BFG540W/X
PDF下载: 下载PDF文件 查看货源
内容描述: NPN 9 GHz宽带晶体管 [NPN 9 GHz wideband transistor]
分类和应用: 晶体晶体管
文件页数/大小: 16 页 / 166 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
BFG540W  
BFG540W/X; BFG540W/XR  
NPN 9 GHz wideband transistor  
FEATURES  
MARKING  
High power gain  
TYPE NUMBER  
CODE  
Low noise figure  
BFG540W  
N9  
N7  
N8  
4
3
page  
High transition frequency  
BFG540W/X  
BFG540W/XR  
Gold metallization ensures  
excellent reliability.  
1
2
PINNING  
Top view  
MSB014  
APPLICATIONS  
PIN  
DESCRIPTION  
They are intended for applications in  
the RF front end, in wideband  
applications in the GHz range such as  
analog and digital cellular telephones,  
cordless telephones (CT2, CT3,  
PCN, DECT, etc.), radar detectors,  
pagers, satellite television tuners  
(SATV), MATV/CATV amplifiers and  
repeater amplifiers in fibre-optic  
systems.  
BFG540W (see Fig.1)  
1
2
3
4
collector  
base  
Fig.1 SOT343N.  
emitter  
emitter  
BFG540W/X (see Fig.1)  
3
4
page  
1
2
3
4
collector  
emitter  
base  
DESCRIPTION  
emitter  
NPN silicon planar epitaxial  
transistors in plastic, 4-pin  
dual-emitterSOT343NandSOT343R  
packages.  
2
1
BFG540W/XR (see Fig.2)  
Top view  
MSB842  
1
2
3
4
collector  
emitter  
base  
Fig.2 SOT343R.  
emitter  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VCBO  
VCES  
IC  
collector-base voltage  
collector-emitter voltage  
collector current (DC)  
total power dissipation  
DC current gain  
open emitter  
RBE = 0  
20  
V
15  
V
120  
500  
mA  
mW  
Ptot  
hFE  
Cre  
up to Ts = 85 °C  
IC = 40 mA; VCE = 8 V  
60  
120 250  
feedback capacitance  
transition frequency  
IC = 0; VCB = 8 V; f = 1 MHz  
0.5  
9
pF  
fT  
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C  
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C  
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C  
GHz  
dB  
dB  
dB  
dB  
GUM  
maximum unilateral  
power gain  
16  
10  
15  
2.1  
|s21|2  
F
insertion power gain  
noise figure  
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 14  
Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz  
1997 Dec 04  
2