Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
FEATURES
MARKING
• High power gain
TYPE NUMBER
CODE
• Low noise figure
BFG540W
N9
N7
N8
4
3
page
• High transition frequency
BFG540W/X
BFG540W/XR
• Gold metallization ensures
excellent reliability.
1
2
PINNING
Top view
MSB014
APPLICATIONS
PIN
DESCRIPTION
They are intended for applications in
the RF front end, in wideband
applications in the GHz range such as
analog and digital cellular telephones,
cordless telephones (CT2, CT3,
PCN, DECT, etc.), radar detectors,
pagers, satellite television tuners
(SATV), MATV/CATV amplifiers and
repeater amplifiers in fibre-optic
systems.
BFG540W (see Fig.1)
1
2
3
4
collector
base
Fig.1 SOT343N.
emitter
emitter
BFG540W/X (see Fig.1)
3
4
page
1
2
3
4
collector
emitter
base
DESCRIPTION
emitter
NPN silicon planar epitaxial
transistors in plastic, 4-pin
dual-emitterSOT343NandSOT343R
packages.
2
1
BFG540W/XR (see Fig.2)
Top view
MSB842
1
2
3
4
collector
emitter
base
Fig.2 SOT343R.
emitter
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VCBO
VCES
IC
collector-base voltage
collector-emitter voltage
collector current (DC)
total power dissipation
DC current gain
open emitter
RBE = 0
−
−
−
−
−
20
V
−
15
V
−
120
500
mA
mW
Ptot
hFE
Cre
up to Ts = 85 °C
−
IC = 40 mA; VCE = 8 V
60
−
120 250
feedback capacitance
transition frequency
IC = 0; VCB = 8 V; f = 1 MHz
0.5
9
−
−
−
−
−
−
pF
fT
IC = 40 mA; VCE = 8 V; f = 1 GHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C
IC = 40 mA; VCE = 8 V; f = 2 GHz; Tamb = 25 °C
−
GHz
dB
dB
dB
dB
GUM
maximum unilateral
power gain
−
16
10
15
2.1
|s21|2
F
insertion power gain
noise figure
IC = 40 mA; VCE = 8 V; f = 900 MHz; Tamb = 25 °C 14
Γs = Γopt; IC = 10 mA; VCE = 8 V; f = 2 GHz
−
1997 Dec 04
2
NXP [ NXP ]
