Philips Semiconductors
Product specification
BFG540W
BFG540W/X; BFG540W/XR
NPN 9 GHz wideband transistor
MRA761
MLC050
5
20
4
handbook, halfpage
handbook, halfpage
I
= 10 mA
40 mA
G
G
F
C
ass
(dB)
15
min
(dB)
F
(dB)
ass
I
= 40 mA
10 mA
C
4
3
2
10
5
3
2
40 mA
10 mA
1
F
min
0
1
0
0
10
−5
2
3
4
4
2
3
10
10
10
10
10
f (MHz)
f (MHz)
VCE = 8 V.
VCE = 8 V.
Fig.15 Minimum noise figure as a function
of frequency; typical values.
Fig.16 Associated available gain as a function
of frequency; typical values.
1997 Dec 04
8