NXP Semiconductors
BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
R
th(j-sp)
Per device
R
th(j-a)
thermal resistance from
junction to ambient
in free air
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to solder point
Conditions
in free air
Min
-
-
-
Typ
-
-
-
Max
568
500
230
Unit
K/W
K/W
K/W
Per transistor
-
-
-
-
416
313
K/W
K/W
[1]
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm
2
.
10
3
Z
th(j-a)
(K/W)
10
2
δ
=1
0.75
0.50
0.33
0.20
0.10
0.05
0.02
10
0.01
0
006aab420
1
10
−5
10
−4
10
−3
10
−2
10
−1
1
10
10
2
t
p
(s)
10
3
FR4 PCB, standard footprint
Fig 2.
Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
BC847BS_3
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 03 — 18 February 2009
4 of 12
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