BC847BS
45 V, 100 mA NPN/NPN general-purpose transistor
Rev. 03 — 18 February 2009
Product data sheet
1. Product profile
1.1 General description
NPN/NPN general-purpose transistor pair in a very small SOT363 (SC-88)
Surface-Mounted Device (SMD) plastic package.
PNP/PNP complement: BC857BS.
1.2 Features
I
I
I
I
I
Low collector capacitance
Low collector-emitter saturation voltage
Closely matched current gain
Reduces number of components and board space
No mutual interference between the transistors
1.3 Applications
I
General-purpose switching and amplification
1.4 Quick reference data
Table 1.
Symbol
V
CEO
I
C
h
FE
Quick reference data
Parameter
collector-emitter voltage
collector current
DC current gain
V
CE
= 5 V; I
C
= 2 mA
Conditions
open base
Min
-
-
200
Typ
-
-
-
Max
45
100
450
Unit
V
mA
Per transistor
PHILIPS [ NXP SEMICONDUCTORS ]
