NXP Semiconductors
BC807; BC807W; BC327
45 V, 500 mA PNP general-purpose transistors
−1.2
I
C
(A)
−0.8
(3)
006aaa128
−1.2
(3)
006aaa129
(2)
(1)
(2)
(1)
I
C
(A)
−0.8
(4)
(5)
(6)
(7)
(8)
(9)
(4)
(5)
(6)
(7)
(8)
−0.4
(9)
(10)
−0.4
(10)
0
0
−1
−2
−3
−4
−5
V
CE
(V)
0
0
−1
−2
−3
−4
−5
V
CE
(V)
T
amb
= 25
°C
(1) I
B
=
−16.0
mA
(2) I
B
=
−14.4
mA
(3) I
B
=
−12.8
mA
(4) I
B
=
−11.2
mA
(5) I
B
=
−9.6
mA
(6) I
B
=
−8.0
mA
(7) I
B
=
−6.4
mA
(8) I
B
=
−4.8
mA
(9) I
B
=
−3.2
mA
(10) I
B
=
−1.6
mA
T
amb
= 25
°C
(1) I
B
=
−13.0
mA
(2) I
B
=
−11.7
mA
(3) I
B
=
−10.4
mA
(4) I
B
=
−9.1
mA
(5) I
B
=
−7.8
mA
(6) I
B
=
−6.5
mA
(7) I
B
=
−5.2
mA
(8) I
B
=
−3.9
mA
(9) I
B
=
−2.6
mA
(10) I
B
=
−1.3
mA
Fig 10. Selection -16: Collector current as a function
of collector-emitter voltage; typical values
Fig 11. Selection -25: Collector current as a function
of collector-emitter voltage; typical values
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
9 of 19
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