BC807; BC807W; BC327
NXP Semiconductors
45 V, 500 mA PNP general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
−100
−5
Unit
nA
ICBO
collector-base cut-off current
IE = 0 A; VCB = −20 V
-
-
-
-
IE = 0 A; VCB = −20 V;
Tj = 150 °C
μA
IEBO
hFE
emitter-base cut-off current
DC current gain
IC = 0 A; VEB = −5 V
-
-
−100
nA
[1]
IC = −100 mA; VCE = −1 V
BC807; BC807W; BC327
100
100
-
-
600
250
BC807-16; BC807-16W;
BC327-16
BC807-25; BC807-25W;
BC327-25
160
250
-
-
400
600
BC807-40; BC807-40W;
BC327-40
[1]
[1]
hFE
DC current gain
IC = −500 mA; VCE = −1 V
IC = −500 mA; IB = −50 mA
40
-
-
-
-
VCEsat
collector-emitter saturation
voltage
−700
mV
[2]
VBE
Cc
base-emitter voltage
collector capacitance
IC = −500 mA; VCE = −1 V
-
-
-
−1.2
V
IE = ie = 0 A; VCB = −10 V;
5
-
pF
f = 1 MHz
fT
transition frequency
IC = −10 mA; VCE = −5 V;
80
-
-
MHz
f = 100 MHz
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2] VBE decreases by approximately 2 mV/K with increasing temperature.
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
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