BC807; BC807W; BC327
NXP Semiconductors
45 V, 500 mA PNP general-purpose transistors
006aaa122
006aaa123
−10
−10
V
V
BEsat
(V)
BEsat
(V)
−1
−1
(1)
(2)
(3)
(1)
(2)
(3)
−1
−10
−1
−10
−10
−10
−1
2
3
−1
2
3
−1
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I (mA)
C
C
IC/IB = 10
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 4. Selection -16: Base-emitter saturation voltage
as a function of collector current; typical
values
Fig 5. Selection -25: Base-emitter saturation voltage
as a function of collector current; typical
values
006aaa124
−10
V
BEsat
(V)
−1
(1)
(2)
(3)
−1
−10
−10
−1
2
3
−1
−10
−10
−10
I
(mA)
C
IC/IB = 10
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 6. Selection -40: Base-emitter saturation voltage as a function of collector current; typical values
BC807_BC807W_BC327_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
7 of 19