NXP Semiconductors
BAV70 series
High-speed switching diodes
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
Per diode
V
F
forward voltage
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
V
R
= 25 V
V
R
= 80 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 80 V; T
j
= 150
°C
C
d
t
rr
V
FR
[1]
[2]
[3]
Parameter
Conditions
Min
Typ
Max
Unit
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715
855
1
1.25
30
0.5
30
100
1.5
4
1.75
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
diode capacitance
reverse recovery time
forward recovery voltage
Pulse test: t
p
≤
300
µs; δ ≤
0.02.
V
R
= 0 V; f = 1 MHz
-
-
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA.
When switched from I
F
= 10 mA; t
r
= 20 ns.
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
5 of 15
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