NXP Semiconductors
BAV70 series
High-speed switching diodes
Table 6.
Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
P
tot
Parameter
total power dissipation
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
Per device
I
F
forward current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
T
j
T
amb
T
stg
[1]
[2]
[3]
Conditions
Min
-
Max
250
250
350
170
200
Unit
mW
mW
mW
mW
mW
T
amb
≤
25
°C
T
amb
≤
25
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
T
amb
≤
25
°C
T
s
= 90
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
-
-
−65
−65
125
75
100
75
100
150
+150
+150
mA
mA
mA
mA
mA
°C
°C
°C
junction temperature
ambient temperature
storage temperature
T
j
= 25
°C
prior to surge.
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
6. Thermal characteristics
Table 7.
Symbol
Per diode
R
th(j-a)
thermal resistance from
junction to ambient
BAV70
BAV70M
BAV70W
R
th(j-t)
thermal resistance from
junction to tie-point
BAV70
BAV70W
R
th(j-sp)
thermal resistance from
junction to solder point
BAV70S
BAV70T
[1]
[2]
BAV70_SER_7
Thermal characteristics
Parameter
Conditions
in free air
Min
Typ
Max
Unit
-
-
-
-
500
500
625
K/W
K/W
K/W
-
-
-
-
-
-
360
300
K/W
K/W
-
-
-
-
255
350
K/W
K/W
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
4 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
