NXP Semiconductors
BAV70 series
High-speed switching diodes
4. Marking
Table 5.
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Marking codes
Marking code
A4*
S4
A4*
A4
A4*
Type number
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per diode
V
RRM
V
R
I
F
repetitive peak reverse
voltage
reverse voltage
forward current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
I
FRM
repetitive peak forward
current
BAV70
BAV70M
BAV70S
BAV70T
BAV70W
I
FSM
non-repetitive peak forward square wave
current
t
p
= 1
µs
t
p
= 1 ms
t
p
= 1 s
Parameter
Conditions
Min
-
-
Max
100
100
215
150
250
150
175
Unit
V
V
mA
mA
mA
mA
mA
T
amb
≤
25
°C
T
s
= 90
°C
T
s
= 60
°C
T
s
= 90
°C
T
amb
≤
25
°C
-
-
-
-
-
-
-
-
-
-
-
-
-
450
500
450
500
500
4
1
0.5
mA
mA
mA
mA
mA
A
A
A
BAV70_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 27 November 2007
3 of 15
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