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74HCT74D 参数 Datasheet PDF下载

74HCT74D图片预览
型号: 74HCT74D
PDF下载: 下载PDF文件 查看货源
内容描述: 双D- FL型IP- FL运算与置位和复位;正边沿触发 [Dual D-type flip-flop with set and reset; positive-edge trigger]
分类和应用: 触发器锁存器逻辑集成电路光电二极管PC
文件页数/大小: 22 页 / 119 K
品牌: PHILIPS [ NXP SEMICONDUCTORS ]
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Philips Semiconductors
Product specification
Dual D-type flip-flop with set and reset;
positive-edge trigger
RECOMMENDED OPERATING CONDITIONS
74HC74
SYMBOL
V
CC
V
I
V
O
T
amb
t
r
, t
f
PARAMETER
supply voltage
input voltage
output voltage
operating ambient
temperature
input rise and fall
times
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
CONDITIONS
MIN.
2.0
0
0
−40
TYP.
5.0
+25
6.0
MAX.
6.0
V
CC
V
CC
+125
1000
500
400
74HC74; 74HCT74
74HCT74
UNIT
MIN.
4.5
0
0
−40
TYP.
5.0
+25
6.0
MAX.
5.5
V
CC
V
CC
+125
500
500
500
V
V
V
°C
ns
ns
ns
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
OK
I
O
I
CC
, I
GND
T
stg
P
tot
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. For SO14 packages: above 70
°C
derate linearly with 8 mW/K.
For SSOP14 and TSSOP14 packages: above 60
°C
derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C
derate linearly with 4.5 mW/K.
For DIP14 packages: above 70
°C
derate linearly with 12 mW/K.
PARAMETER
supply voltage
input diode current
output diode current
output source or sink current
V
CC
or GND current
storage temperature
power dissipation
T
amb
=
−40
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V;
note 1
V
O
<
−0.5
V or V
O
> V
CC
+ 0.5 V;
note 1
CONDITIONS
MIN.
−0.5
MAX.
+7.0
±20
±20
±25
±100
+150
500
V
mA
mA
mA
mA
°C
mW
UNIT
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
−65
2003 Jul 10
7