Philips Semiconductors
Product specification
Schottky barrier diodes
1N5817; 1N5818; 1N5819
handbook, halfpage
200
MBG434
handbook, halfpage
0.20
MBG435
( C)
150
VRWM
δ
= 0.2
o
Tj
PR
(W)
0.15
VR
VRWM
δ
= 0.5
VRWM
δ
= 0.2
100
VR
VRWM
δ
= 0.5
0.10
50
0.05
0
0
10
VR (V)
20
0
0
10
VR (V)
20
Fig.6
1N5817. Maximum permissible junction
temperature as a function of reverse voltage;
R
th j-a
= 100 K/W.
Fig.7
1N5817. Reverse power dissipation as a
function of reverse voltage (max. values);
R
th j-a
= 100 K/W.
handbook, halfpage
200
MBG432
handbook, halfpage
0.20
MBG437
Tj
o
( C)
150
VRWM
δ
= 0.2
PR
(W)
0.15
VR
VRWM
δ
= 0.5
VRWM
δ
= 0.2
100
VR
0.10
VRWM
δ
= 0.5
50
0.05
0
0
10
20
VR (V)
30
0
0
10
20
VR (V)
30
Fig.8
1N5818. Maximum permissible junction
temperature as a function of reverse voltage;
R
th j-a
= 100 K/W.
7
Fig.9
1N5818. Reverse power dissipation as a
function of reverse voltage (max. values);
R
th j-a
= 100 K/W.
1996 May 03
PHILIPS [ NXP SEMICONDUCTORS ]
