Philips Semiconductors
Product specification
Schottky barrier diodes
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C;
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
1N5817
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
V
F
forward voltage
1N5818
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
V
F
forward voltage
1N5819
see Fig.2
I
F
= 0.1 A
I
F
= 1 A
I
F
= 3 A
I
R
C
d
reverse current
diode capacitance
1N5817
1N5818
1N5819
Note
1. Pulsed test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOD81 standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
V
R
= V
RRMmax
; note 1
V
R
= V
RRMmax
; T
j
= 100
°C
V
R
= 4 V; f = 1 MHz
CONDITIONS
1N5817; 1N5818; 1N5819
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
TYP.
MAX.
320
450
750
330
550
875
340
600
900
1
10
−
−
−
UNIT
mV
mV
mV
mV
mV
mV
mV
mV
mV
mA
mA
pF
pF
pF
80
50
50
CONDITIONS
note 1
VALUE
100
UNIT
K/W
1996 May 03
4
PHILIPS [ NXP SEMICONDUCTORS ]
