Philips Semiconductors
Product specification
Schottky barrier diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
R
1N5817
1N5818
1N5819
V
RSM
non-repetitive peak reverse voltage
1N5817
1N5818
1N5819
V
RRM
repetitive peak reverse voltage
1N5817
1N5818
1N5819
V
RWM
crest working reverse voltage
1N5817
1N5818
1N5819
I
F(AV)
I
FSM
average forward current
non-repetitive peak forward current
PARAMETER
continuous reverse voltage
1N5817; 1N5818; 1N5819
CONDITIONS
−
−
−
−
−
−
−
−
−
−
−
−
T
amb
= 55
°C;
R
th j-a
= 100 K/W;
note 1; V
R(equiv)
= 0.2 V; note 2
t = 8.3 ms half sine wave;
JEDEC method;
T
j
= T
j max
prior to surge: V
R
= 0
−
−
MIN.
MAX.
20
30
40
24
36
48
20
30
40
20
30
40
1
25
V
V
V
V
V
V
V
V
V
V
V
V
A
A
UNIT
T
stg
T
j
Notes
storage temperature
junction temperature
−65
−
+175
125
°C
°C
1. Refer to SOD81 standard mounting conditions.
2. For Schottky barrier diodes thermal run-away has to be considered, as in some applications, the reverse power
losses P
R
are a significant part of the total power losses. Nomograms for determination of the reverse power losses
P
R
and I
F(AV)
rating will be available on request.
1996 May 03
3
PHILIPS [ NXP SEMICONDUCTORS ]
