NXP Semiconductors
2PA1774xMB series
40 V, 100 mA PNP general-purpose transistors
7. Characteristics
Table 8.
Characteristics
T
amb
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
2PA1774QMB
2PA1774RMB
2PA1774SMB
V
CEsat
f
T
C
c
[1]
Conditions
V
CB
=
30
V; I
E
= 0 A
V
CB
=
30
V; I
E
= 0 A;
T
j
= 150
C
V
EB
=
4
V; I
C
= 0 A
V
CE
=
6
V; I
C
=
1
mA
Min
-
-
-
Typ
-
-
-
Max
100
5
100
Unit
nA
A
nA
I
EBO
h
FE
120
180
270
I
C
=
50
mA; I
B
=
5
mA
V
CE
=
12
V; I
C
=
2
mA;
f = 100 MHz
-
-
-
-
-
-
270
390
560
200
-
2.2
mV
MHz
pF
collector-emitter
saturation voltage
transition frequency
-
100
-
collector capacitance V
CB
=
12
V; I
E
= i
e
= 0 A;
f = 1 MHz
Pulse test: t
p
300
s;
0.02.
2PA1774XMB_SER
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© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 1 — 23 March 2012
5 of 12
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