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PE4302-01 参数 Datasheet PDF下载

PE4302-01图片预览
型号: PE4302-01
PDF下载: 下载PDF文件 查看货源
内容描述: 50欧姆RF数字衰减器6位, 31.5分贝, DC- 4.0 GHZ [50 Ohm RF Digital Attenuator 6-bit, 31.5 dB, DC-4.0 GHZ]
分类和应用: 衰减器
文件页数/大小: 11 页 / 458 K
品牌: PSEMI [ Peregrine Semiconductor ]
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PE4302  
Product Specification  
Figure 14. Pin Configuration (Top View)  
Table 3. Absolute Maximum Ratings  
Symbol  
Parameter/Conditions  
Min Max Units  
VDD  
Power supply voltage  
-0.3  
-0.3  
-65  
-40  
4.0  
V
VDD  
+
VI  
TST  
TOP  
PIN  
Voltage on any input  
V
0.3  
Storage temperature range  
150  
85  
°C  
1
2
3
4
5
15  
14  
13  
12  
11  
C16  
RF1  
C8  
Operating temperature  
range  
°C  
RF2  
20-lead QFN  
4x4mm  
Input power (50)  
ESD voltage (Human Body  
Model)  
24  
dBm  
V
Data  
Clock  
LE  
P/S  
Exposed Solder Pad  
Vss/GND  
GND  
VESD  
500  
Table 4. DC Electrical Specifications  
Parameter  
Min  
Typ  
Max  
Units  
V
VDD Power Supply  
Voltage  
2.7  
3.0  
3.3  
IDD Power Supply  
Current  
Table 2. Pin Descriptions  
100  
µA  
Pin  
No.  
Pin  
Name  
Digital Input High  
Digital Input Low  
Digital Input Leakage  
0.7xVDD  
V
V
Description  
0.3xVDD  
1
1
2
C16  
RF1  
Attenuation control bit, 16dB (Note 4).  
RF port (Note 1).  
µA  
3
Data  
Clock  
LE  
Serial interface data input (Note 4).  
Serial interface clock input.  
Latch Enable input (Note 2).  
Power supply pin.  
Exposed Solder Pad Connection  
4
The exposed solder pad on the bottom of the  
package must be grounded for proper device  
operation.  
5
6
VDD  
7
PUP1  
PUP2  
VDD  
Power-up selection bit, MSB.  
Power-up selection bit, LSB.  
Power supply pin.  
Electrostatic Discharge (ESD) Precautions  
8
When handling this UltraCMOS™ device, observe  
the same precautions that you would use with  
other ESD-sensitive devices. Although this device  
contains circuitry to protect it from damage due to  
ESD, precautions should be taken to avoid  
exceeding the rate specified in Table 3.  
9
10  
11  
12  
GND  
GND  
Vss/GND  
Ground connection.  
Ground connection.  
Negative supply voltage or GND  
connection(Note 3)  
13  
14  
P/S  
RF2  
C8  
Parallel/Serial mode select.  
RF port (Note 1).  
Latch-Up Avoidance  
15  
Attenuation control bit, 8 dB.  
Attenuation control bit, 4 dB.  
Attenuation control bit, 2 dB.  
Ground connection.  
Unlike conventional CMOS devices, UltraCMOS™  
devices are immune to latch-up.  
16  
C4  
17  
C2  
Switching Frequency  
18  
GND  
C1  
The PE4302 has a maximum 25kHz switching  
rate.  
19  
Attenuation control bit, 1 dB.  
Attenuation control bit, 0.5 dB.  
Ground for proper operation  
20  
C0.5  
GND  
Paddle  
Resistor on Pin 1 & 3  
Note 1: Both RF ports must be held at 0 VDC or DC blocked with an  
external series capacitor.  
A 10 kresistor on the inputs to Pin 1 & 3 (see  
Figure 16) will eliminate package resonance  
between the RF input pin and the two digital  
inputs. Specified attenuation error versus  
frequency performance is dependent upon this  
condition.  
2: Latch Enable (LE) has an internal 100 kresistor to VDD.  
3: Connect pin 12 to GND to enable internal negative voltage  
generator. Connect pin 12 to VSS (-VDD) to bypass and  
disable internal negative voltage generator.  
4. Place a 10 kresistor in series, as close to pin as possible  
to avoid frequency resonance.  
Document No. 70/0056~02D www.psemi.com  
©2005 Peregrine Semiconductor Corp. All rights reserved.  
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