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NVHL020N120SC1 参数 Datasheet PDF下载

NVHL020N120SC1图片预览
型号: NVHL020N120SC1
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L]
分类和应用:
文件页数/大小: 7 页 / 301 K
品牌: ONSEMI [ ONSEMI ]
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NVHL020N120SC1  
TYPICAL CHARACTERISTICS (continued)  
100K  
20  
V
DD  
= 400 V  
I
D
= 80 A  
V
= 800 V  
DD  
10K  
1K  
15  
10  
5
C
iss  
V
= 600 V  
DD  
C
oss  
100  
10  
1
C
rss  
0
f = 1 MHz  
= 0 V  
V
GS  
5  
0
50  
100  
150  
200  
250  
0.1  
1
10  
100  
800  
175  
0.1  
V
, DRAINTOSOURCE VOLTAGE (V)  
Q , GATE CHARGE (nC)  
g
DS  
Figure 7. GatetoSource Voltage vs. Total  
Figure 8. Capacitance vs. DraintoSource  
Charge  
Voltage  
120  
100  
80  
1000  
100  
V
= 20 V  
GS  
T = 25°C  
J
60  
T = 150°C  
J
40  
10  
1
20  
0
Typical performance based  
on characterization data  
R
= 0.28°C/W  
JC  
0.001  
0.01  
0.1  
1
10  
100  
25  
50  
75  
100  
125  
150  
t , TIME IN AVALANCHE (ms)  
AV  
T , CASE TEMPERATURE (°C)  
C
Figure 9. Unclamped Inductive Switching  
Capability  
Figure 10. Maximum Continuous Drain  
Current vs. Case Temperature  
100K  
1000  
100  
10  
Single Pulse  
R
= 0.28°C/W  
JC  
T
C
= 25°C  
10K  
1K  
10 s  
100 s  
This area is  
limited by R  
DS(on)  
1 ms  
Single Pulse  
T = Max Rated  
1
J
10 ms  
Curve bent to  
measured data  
R
T
= 0.28°C/W  
= 25°C  
JC  
100 ms  
C
0.1  
100  
0.1  
1
10  
100  
1K  
5K  
0.00001 0.0001  
0.001  
0.01  
V
DS  
, DRAINTOSOURCE VOLTAGE (V)  
t, PULSE WIDTH (sec)  
Figure 11. Safe Operating Area  
Figure 12. Single Pulse Maximum Power  
Dissipation  
www.onsemi.com  
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