NVHL020N120SC1
TYPICAL CHARACTERISTICS
250
200
150
100
2.5
V
GS
= 20 V
V
= 16 V
GS
16 V
17 V
2.0
18 V
19 V
19 V
18 V
1.5
17 V
V
= 20 V
GS
1.0
0.5
50
0
0
2
4
6
8
10
0
5
1
50
100
150
200
250
V
, DRAIN−TO−SOURCE VOLTAGE (V)
I , DRAIN CURRENT (A)
DS
D
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
120
80
1.9
1.7
1.5
1.3
1.1
I
= 60 A
D
I
V
= 60 A
= 20 V
D
GS
T = 150°C
J
40
0
0.9
0.7
T = 25°C
J
−75 −50 −25
0
25 50 75 100 125 150 175
10
15
20
T , JUNCTION TEMPERATURE (°C)
J
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Figure 4. On−Resistance vs. Gate−to−Source
Temperature
Voltage
120
100
80
300
V
= −5 V
V
= 20 V
GS
DS
T = 25°C
J
60
30
40
T = 25°C
J
T = 175°C
J
20
0
T = −55°C
J
T = 175°C
J
T = −55°C
J
3
2
4
6
8
10
12
14
16
2
3
4
5
6
7
8
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
www.onsemi.com
3
ONSEMI [ ONSEMI ]
