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NVHL020N120SC1 参数 Datasheet PDF下载

NVHL020N120SC1图片预览
型号: NVHL020N120SC1
PDF下载: 下载PDF文件 查看货源
内容描述: [Silicon Carbide (SiC) MOSFET, N‐Channel - EliteSiC, 20 mohm, 1200 V, M1, TO247−3L]
分类和应用:
文件页数/大小: 7 页 / 301 K
品牌: ONSEMI [ ONSEMI ]
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NVHL020N120SC1  
ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Test Conditions  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
DraintoSource Breakdown Voltage  
V
V
I
= 0 V, I = 1 mA  
1200  
V
(BR)DSS  
GS  
D
DraintoSource Breakdown Voltage  
Temperature Coefficient  
V
/T  
= 1 mA, referenced to 25_C  
900  
mV/_C  
(BR)DSS  
J
D
Zero Gate Voltage Drain Current  
I
100  
250  
1
A
V
GS  
V
GS  
V
GS  
= 0 V, V = 1200 V, T = 25_C  
DSS  
DS  
J
= 0 V, V = 1200 V, T = 175_C  
DS  
J
GatetoSource Leakage Current  
ON CHARACTERISTICS  
I
= +25/15 V, V = 0 V  
DS  
A
GSS  
Gate Threshold Voltage  
V
R
V
= V , I = 20 mA  
1.8  
5  
2.7  
4.3  
+20  
28  
50  
V
V
GS(th)  
GS  
DS  
D
Recommended Gate Voltage  
DraintoSource On Resistance  
V
GOP  
V
GS  
V
GS  
V
DS  
= 20 V, I = 60 A, T = 25_C  
20  
35  
28  
mꢀ  
DS(on)  
D
J
= 20 V, I = 60 A, T = 175_C  
D
J
Forward Transconductance  
g
FS  
= 10 V, I = 60 A  
S
D
CHARGES, CAPACITANCES & GATE RESISTANCE  
Input Capacitance  
Output Capacitance  
Reverse Transfer Capacitance  
Total Gate Charge  
C
V
= 0 V, f = 1 MHz, V = 800 V  
2890  
260  
22  
pF  
nC  
ISS  
GS  
GS  
DS  
C
OSS  
RSS  
C
Q
V
= 5/20 V, V = 600 V, I = 80 A  
203  
33  
G(tot)  
DS  
D
Threshold Gate Charge  
GatetoSource Charge  
GatetoDrain Charge  
Gate Resistance  
Q
G(th)  
Q
66  
GS  
GD  
Q
47  
R
f = 1 MHz  
1.81  
G
SWITCHING CHARACTERISTICS  
Turn-On Delay Time  
Rise Time  
t
t
V
D
= 5/20 V, V = 800 V,  
25  
57  
ns  
d(on)  
GS  
DS  
I
= 80 A, R = 2 ,  
G
t
r
Inductive Load  
TurnOff Delay Time  
Fall Time  
45  
d(off)  
t
f
11  
Turn-On Switching Loss  
Turn-Off Switching Loss  
Total Switching Loss  
E
2718  
326  
3040  
J
ON  
OFF  
TOT  
E
E
DRAINSOURCE DIODE CHARACTERISTICS  
Continuous DraintoSource Diode  
I
V
V
= 5 V, T = 25_C  
54  
A
A
SD  
GS  
J
Forward Current  
Pulsed DraintoSource Diode  
Forward Current (Note 2)  
I
= 5 V, T = 25_C  
412  
SDM  
GS  
J
Forward Diode Voltage  
V
V
V
= 5 V, I = 30 A, T = 25_C  
3.7  
31  
V
ns  
nC  
J  
A
SD  
GS  
SD  
J
Reverse Recovery Time  
Reverse Recovery Charge  
Reverse Recovery Energy  
Peak Reverse Recovery Current  
t
= 5/20 V, I = 80 A,  
RR  
GS  
S
SD  
dI /dt = 1000 A/s  
Q
240  
10  
RR  
E
REC  
RRM  
I
15  
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product  
performance may not be indicated by the Electrical Characteristics if operated under different conditions.  
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