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NTR4101PT1G 参数 Datasheet PDF下载

NTR4101PT1G图片预览
型号: NTR4101PT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 沟槽功率MOSFET -20 V,单P沟道, SOT -23 [Trench Power MOSFET −20 V, Single P−Channel, SOT−23]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 6 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTR4101P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AK
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES
LEAD FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW
STANDARD 318−08.
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
A
L
3
1
2
B S
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5