NTR4101P
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 4)
(V
GS
= 0 V, I
D
= −250
mA)
Zero Gate Voltage Drain Current (Note 4)
(V
GS
= 0 V, V
DS
= −16 V)
Gate−to−Source Leakage Current
(V
GS
=
±8.0
V, V
DS
= 0 V)
ON CHARACTERISTICS
Gate Threshold Voltage (Note 4)
(V
GS
= V
DS
, I
D
= −250
mA)
Drain−to−Source On−Resistance
(V
GS
= −4.5 V, I
D
= −1.6 A)
(V
GS
= −2.5 V, I
D
= −1.3 A)
(V
GS
= −1.8 V, I
D
= −0.9 A)
Forward Transconductance (V
DS
= −5.0 V, I
D
= −2.3 A)
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate−to−Source Gate Charge
Gate−to−Drain “Miller” Charge
Gate Resistance
SWITCHING CHARACTERISTICS
(Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
4. Pulse Test: Pulse Width
≤
300
ms,
Duty Cycle
≤
2%.
5. Switching characteristics are independent of operating junction temperature.
(V
GS
= 0 V
V,
dI
SD
/dt = 100 A/ms, I
S
= −1.6 A)
(V
GS
= 0 V, I
S
= −2.4 A)
V
SD
t
rr
t
a
t
b
Q
rr
−0.82
12.8
9.9
3.0
1008
−1.2
15
V
ns
ns
ns
nC
(V
GS
= −4.5 V, V
DS
= −10 V,
4.5
10
I
D
= −1.6 A, R
G
= 6.0
W)
t
d(on)
t
r
t
d(off)
t
f
7.5
12.6
30.2
21.0
ns
(V
GS
= −4.5 V, V
DS
= −10 V, I
D
= −1.6 A)
(V
DS
= −10 V, I
D
= −1.6 A)
(V
DS
= −10 V, I
D
= −1.6 A)
(
(V
GS
= 0 V, f = 1 MHz, V
DS
= −10 V)
,
,
)
C
iss
C
oss
C
rss
Q
G(tot)
Q
GS
Q
GD
R
G
675
100
75
7.5
1.2
2.2
6.5
8.5
nC
nC
nC
W
pF
V
GS(th)
R
DS(on)
70
90
112
g
FS
75
85
120
210
S
−0.40
−0.720
−1.5
V
mW
V
(BR)DSS
I
DSS
I
GSS
−20
−1.0
±100
V
mA
nA
Symbol
Min
Typ
Max
Unit
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