NTR4101P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−V
GS,
GATE−TO−SOURCE VOLTAGE (VOLTS)
1000
V
GS
= 0 V
C, CAPACITANCE (pF)
800
C
iss
T
J
= 25°C
4.0
QT
3.5
3.0
2.5
2.0
1.5
1.0
V
DS
Q
gs
Q
gd
600
V
GS
400
200
C
oss
C
rss
0
2
4
6
8
10
12
14
16
18
20
0.5
0
0
I
D
= −1.6 A
T
J
= 25°C
4
6
2
Q
g
, TOTAL GATE CHARGE (nC)
8
0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and Drain−to−Source
Voltage vs. Total Gate Charge
1000
−I
S
, SOURCE CURRENT (AMPS)
V
DD
= −10 V
I
D
= −1.6 A
V
GS
= −4.5 V
t, TIME (ns)
100
5
4.5
4
3.5
3
2.5
2
1.5
1
0.5
0
1
10
R
G
, GATE RESISTANCE (OHMS)
100
0
0.2
0.4
0.6
0.8
1.0
−V
SD
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
V
GS
= 0 V
T
J
= 25°C
10
t
d(off)
t
f
t
r
t
d(on)
1
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
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