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NTR4101PT1G 参数 Datasheet PDF下载

NTR4101PT1G图片预览
型号: NTR4101PT1G
PDF下载: 下载PDF文件 查看货源
内容描述: 沟槽功率MOSFET -20 V,单P沟道, SOT -23 [Trench Power MOSFET −20 V, Single P−Channel, SOT−23]
分类和应用: 晶体小信号场效应晶体管开关光电二极管
文件页数/大小: 6 页 / 60 K
品牌: ONSEMI [ ON SEMICONDUCTOR ]
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NTR4101P
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
10
V
GS
= −10 V − −2.4 V
−I
D,
DRAIN CURRENT (AMPS)
8
−2.2 V
T
J
= 25°C
−I
D,
DRAIN CURRENT (AMPS)
10
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
3
1
2
4
5
−V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
6
V
DS
20 V
T
J
= −55°C
25°C
125°C
6
−2.0 V
4
.
−1.8 V
−1.6 V
2
0
Figure 1. On−Region Characteristics
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
7
3
5
−I
D,
DRAIN CURRENT (AMPS)
9
T = −55°C
T = 25°C
V
GS
= −5.0 V
T = 125°C
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (W)
0.15
0.14
0.13
0.12
0.11
0.10
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
1
Figure 2. Transfer Characteristics
T
J
= 25°C
V
GS
= −2.5 V
V
GS
= −4.5 V
2
3
5
4
6
8
7
−I
D,
DRAIN CURRENT (AMPS)
9
10
Figure 3. On−Resistance vs. Drain Current and
Temperature
100000
1.4
R
DS(on),
DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
I
D
= −1.6 A
−I
DSS
, LEAKAGE (nA)
10000
Figure 4. On−Resistance vs. Drain Current and
Temperature
V
GS
= 0 V
T
J
= 150°C
1.2
1.0
0.8
0.6
0.4
−50
1000
T
J
= 125°C
100
10
1.0
−25
0
25
50
75
100
125
150
0
2
4
6
8
10
12
14
16
T
J
, JUNCTION TEMPERATURE (°C)
−V
DS,
DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3