NTMFWS1D5N08X
TYPICAL CHARACTERISTICS
10000
1000
100
10
ID=50A
8
6
4
2
0
VGS=0V
T
J=25°C
f=1MHz
V
DD=16V
DD=48V
DD=40V
CISS
COSS
CRSS
V
V
10
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
70
80
90 100
VDS, Drain to Source Voltage (V)
QG, Gate Charge (nC)
Figure 7. Capacitance Characteristics
Figure 8. Gate Charge Characteristics
1000
10000
1000
100
VGS=0V
VGS=10V
VDS=40V
ID=50A
100
10
10
1
0.1
0.01
0.001
0.0001
1
td(on)
td(off)
tr
T
J=175°C
T
J=25°C
tf
T
J=−55°C
0.1
1
10
50
0
0.2
0.4
0.6
0.8
1
1.2
R
VSD, Body Diode Forward Voltage (V)
G, Gate Resistance (W)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Characteristics
T
J=25°C
1000
100
10
T
J=100°C
Limited by RDS(ON)
100
T
J=125°C
R
= 0.77°C/W
q
JC
TC=25°C
Single Pulse
10
pulseDuration=1us
pulseDuration=10us
pulseDuration=100us
pulseDuration=1ms
1
pulseDuration=10ms
pulseDuration=100ms/DC
1
0.1
0.1
1
10
100
1e−03 1e−02 1e−01
1e+00
1e+01
1e+02 1e+03
VDS, Drain to Source Voltage (V)
tAV ,TIME IN AVALANCHE (ms)
Figure 11. Safe Operating Area (SOA)
Figure 12. Avalanche Current vs. Pulse Time
(UIS)
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