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NTMFWS1D5N08XT1G 参数 Datasheet PDF下载

NTMFWS1D5N08XT1G图片预览
型号: NTMFWS1D5N08XT1G
PDF下载: 下载PDF文件 查看货源
内容描述: [MOSFET - Power, Single, N-Channel, STD Gate. SO8FL-HEFET, 80V, 1.5mΩ, 247 A]
分类和应用:
文件页数/大小: 7 页 / 151 K
品牌: ONSEMI [ ONSEMI ]
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NTMFWS1D5N08X  
TYPICAL CHARACTERISTICS  
800  
700  
600  
500  
400  
300  
200  
100  
0
800  
T
VDS=5V  
J=25°C  
700  
600  
500  
T
J=55°C  
T
J=25°C  
400  
T
J=175°C  
VGS=3V  
300  
200  
100  
0
V
GS=4V  
V
GS=5V  
VGS=6V  
VGS=7V  
V
GS=8V  
VGS=9V  
=10V  
V
GS  
0
0.5  
1
1.5  
2
2.5  
3
3.5  
0
1
2
3
4
5
6
7
8
VDS, Drain to Source Voltage (V)  
VGS, Gate to Source Voltage (V)  
Figure 1. OnRegion Characteristics  
Figure 2. Transfer Characteristics  
6.5  
6
2.5  
2
T
J=25°C  
ID=50A  
T
J=25°C  
T
J=175°C  
5.5  
5
4.5  
4
1.5  
1
3.5  
3
2.5  
2
0.5  
0
V
GS=10V  
1.5  
1
V
GS=6V  
5
6
7
8
9
10  
0
20  
40  
60  
80 100 120 140 160 180 200  
ID, Drain Current (A)  
VGS, Gate to Source Voltage (V)  
Figure 3. OnResistance vs. Gate Voltage  
Figure 4. OnResistance vs. Drain Current  
2.2  
2
1e+06  
100000  
10000  
1000  
100  
I
VGS=0V  
D =50A  
VGS=10V  
1.8  
1.6  
1.4  
1.2  
1
T
J=25°C  
0.8  
0.6  
0.4  
T
J=85°C  
10  
T
J=125°C  
T
J=150°C  
T
J=175°C  
1
75 50 25  
0
25  
50  
75 100 125 150 175  
10  
20  
30  
40  
50  
60  
70  
80  
T
VDS, Drain to Source Voltage (V)  
J, Junction Temperature (°C)  
Figure 5. Normalized OnResistance vs.  
Figure 6. Drain Leakage Current vs. Drain  
Voltage  
Junction Temperature  
www.onsemi.com  
3
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