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MC74HC175AFELG 参数 Datasheet PDF下载

MC74HC175AFELG图片预览
型号: MC74HC175AFELG
PDF下载: 下载PDF文件 查看货源
内容描述: 四D触发器与普通时钟和复位高性能硅栅CMOS [Quad D Flip−Flop with Common Clock and Reset High−Performance Silicon−Gate CMOS]
分类和应用: 触发器锁存器逻辑集成电路光电二极管时钟
文件页数/大小: 10 页 / 121 K
品牌: ONSEMI [ ONSEMI ]
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MC74HC175A  
MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
This device contains protection  
circuitry to guard against damage  
due to high static voltages or electric  
fields. However, precautions must  
be taken to avoid applications of any  
voltage higher than maximum rated  
voltages to this high−impedance cir-  
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage (Referenced to GND)  
DC Output Voltage (Referenced to GND)  
DC Input Current, per Pin  
– 0.5 to + 7.0  
CC  
V
– 0.5 to V + 0.5  
V
in  
CC  
V
– 0.5 to V + 0.5  
V
out  
CC  
I
20  
25  
50  
mA  
mA  
mA  
mW  
in  
cuit. For proper operation, V and  
in  
I
I
DC Output Current, per Pin  
out  
V
out  
should be constrained to the  
range GND v (V or V ) v V  
.
CC  
DC Supply Current, V and GND Pins  
in  
out  
CC  
CC  
Unused inputs must always be  
tied to an appropriate logic voltage  
P
Power Dissipation in Still Air,  
Plastic DIP†  
SOIC Package†  
TSSOP Package†  
750  
500  
450  
D
level (e.g., either GND or V ).  
CC  
Unused outputs must be left open.  
T
Storage Temperature  
– 65 to + 150  
_C  
_C  
stg  
T
Lead Temperature, 1 mm from Case for 10 Seconds  
(Plastic DIP, SOIC or TSSOP Package)  
L
260  
Maximum ratings are those values beyond which device damage can occur. Maximum ratings  
applied to the device are individual stress limit values (not normal operating conditions) and are  
not valid simultaneously. If these limits are exceeded, device functional operation is not implied,  
damage may occur and reliability may be affected.  
†Derating — Plastic DIP: – 10 mW/_C from 65_ to 125_C  
SOIC Package: – 7 mW/_C from 65_ to 125_C  
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C  
For high frequency or heavy load considerations, see Chapter 2 of the ON Semiconductor High−Speed CMOS Data Book (DL129/D).  
RECOMMENDED OPERATING CONDITIONS  
Symbol  
Parameter  
Min  
2.0  
0
Max  
Unit  
V
V
DC Supply Voltage (Referenced to GND)  
DC Input Voltage, Output Voltage (Referenced to GND)  
Operating Temperature, All Package Types  
6.0  
CC  
V , V  
in out  
V
V
CC  
T
A
– 55  
+ 125  
_C  
ns  
t , t  
r
Input Rise and Fall Time  
(Figure 1)  
V
V
V
V
= 2.0 V  
= 3.0 V  
= 4.5 V  
= 6.0 V  
0
0
0
1000  
600  
500  
400  
f
CC  
CC  
CC  
CC  
DC ELECTRICAL CHARACTERISTICS (Voltages Referenced to GND)  
Guaranteed Limit  
– 55 to  
V
CC  
25_C  
1.5  
2.1  
3.15  
4.2  
V
v 85_C v 125_C  
Symbol  
Parameter  
Test Conditions  
= 0.1 V or V – 0.1 V  
|I | v 20 mA  
Unit  
V
Minimum High−Level Input  
Voltage  
V
2.0  
3.0  
4.5  
6.0  
1.5  
2.1  
1.5  
2.1  
V
IH  
out  
CC  
out  
3.15  
4.2  
3.15  
4 2  
V
Maximum Low−Level Input  
Voltage  
V
= 0.1 V or V – 0.1 V  
2.0  
3.0  
4.5  
6.0  
0.5  
0.9  
1.35  
1.80  
0.5  
0.9  
1.35  
1.80  
0.5  
0.9  
1.35  
1.80  
V
V
IL  
out  
CC  
|I | v 20 mA  
out  
V
Minimum High−Level Output  
Voltage  
V
in  
= V or V  
IL  
2.0  
4.5  
6.0  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
1.9  
4.4  
5.9  
OH  
IH  
|I | v 20 mA  
out  
V
in  
= V or V  
|I | v 2.4 mA  
3.0  
4.5  
6.0  
2.48  
3.98  
5.48  
2.34  
3.84  
5.34  
2.20  
3.70  
5.20  
IH  
IL  
out  
|I | v 4.0 mA  
out  
|I | v 5.2 mA  
out  
http://onsemi.com  
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