Typical Characteristics (Continued)
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1.2
1.1
1.0
※Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
※ Notes :
1. VGS = 10 V
2. ID = 9.5 A
0.8
-100
-100
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
T, Junction Temperature [oC]
J
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
2
102
101
100
10
100 μs
1 ms
10 μs
100 μs
1
10
10 ms
1 ms
10 ms
DC
DC
0
10
※ Notes :
1. TC = 25 oC
※Notes :
1. TC = 25 oC
2. TJ = 150 oC
2. T = 150 oC
J
3. Single Pulse
3. Single Pulse
-1
-1
10
10
0
1
10
2
10
10
100
101
102
V , Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
DS
Figure 9-1. Maximum Safe Operating Area
for FQP19N20C
Figure 9-2. Maximum Safe Operating Area
for FQPF19N20C
20
15
10
5
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Figure 10. Maximum Drain Current
vs Case Temperature
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©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
4
ONSEMI [ ONSEMI ]
