Typical Characteristics
VGS
Top :
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
101
150oC
101
Bottom : 4.5 V
25oC
-55oC
100
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
※ Notes :
1. VDS = 40V
2. 250μs Pulse Test
-1
10
-1
10
100
101
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.8
0.6
0.4
0.2
0.0
101
VGS = 10V
100
150℃
25℃
VGS = 20V
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : T = 25℃
J
-1
10
0.0
0.4
0.8
1.2
1.6
2.0
2.4
0
10
20
30
40
50
60
VSD, Source-Drain voltage [V]
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
3000
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
rss = C
C
VDS = 40V
VDS = 100V
gd
2500
2000
1500
1000
500
VDS = 160V
C
iss
6
C
oss
C
4
rss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
2
※ Note : ID = 19.0A
0
10
0
-1
100
101
0
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2004 Fairchild Semiconductor Corporation
FQP19N20C / FQPF19N20C Rev. C1
3
ONSEMI [ ONSEMI ]
