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FQP85N06 参数 Datasheet PDF下载

FQP85N06图片预览
型号: FQP85N06
PDF下载: 下载PDF文件 查看货源
内容描述: [功率 MOSFET,N 沟道,QFET®,60 V,85 A,10 mΩ,TO-220]
分类和应用: 局域网开关脉冲晶体管
文件页数/大小: 10 页 / 791 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号FQP85N06的Datasheet PDF文件第1页浏览型号FQP85N06的Datasheet PDF文件第2页浏览型号FQP85N06的Datasheet PDF文件第3页浏览型号FQP85N06的Datasheet PDF文件第4页浏览型号FQP85N06的Datasheet PDF文件第6页浏览型号FQP85N06的Datasheet PDF文件第7页浏览型号FQP85N06的Datasheet PDF文件第8页浏览型号FQP85N06的Datasheet PDF文件第9页  
Typical Characteristics (continued)  
1.2  
1.1  
1.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
Notes:  
1. VGS = 0 V  
2. ID= 250 μA  
0.9  
Notes :  
1. V = 10 V  
2. IDG=S 42.5 A  
0.8  
-100  
-100  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
200  
T, Junction Temperature [oC]  
T, Junction Temperature [oC]  
J
J
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
100  
103  
102  
101  
100  
Operation in This Area  
isLimitedbyRDS(on)  
80  
60  
40  
20  
0
100μ s  
1 ms  
10 ms  
Limited by Package  
DC  
Notes :  
1. TC = 25 o  
C
2. T = 175 o  
C
J
3. Single Pulse  
10-1  
100  
101  
102  
25  
50  
75  
100  
125  
150  
175  
VDS, Drain-Source Voltage [V]  
TC, Case Temperature []  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
1 0 0  
D = 0 .5  
0 .2  
N o t e s  
1 . Z θ J C(t )  
2 . D u t y Fa c t o r , D =t 1 /t 2  
:
=
0 .9 4 /W M a x.  
1 0 -1  
0 .1  
3 . T J M  
-
T C  
=
P D M * Z θ J C(t )  
0 .0 5  
PDM  
0 .0 2  
0 .0 1  
t1  
s in g le p u ls e  
t2  
1 0 -2  
1 0 - 5  
1 0 -4  
1 0 -3  
1 0 -2  
1 0 -1  
1 0 0  
1 0 1  
t1 , S q u a re W a v e P u ls e D u ra tio n [s e c ]  
Figure 11. Transient Thermal Response Curve  
www.fairchildsemi.com  
©2001 Fairchild Semiconductor Corporation  
FQP85N06 Rev. C1  
4
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