Package Marking and Ordering Information
Part Number
Top Mark
Package
Packing Method
Reel Size
Tape Width
Quantity
FQP85N06
FQP85N06
TO-220
Tube
N/A
N/A
50 units
Electrical Characteristics
T = 25°C unless otherwise noted.
C
Symbol
Parameter
Test Conditions
Min
Typ
Max
Unit
Off Characteristics
BVDSS
VGS = 0 V, ID = 250 μA
D = 250 μA, Referenced to 25°C
Drain-Source Breakdown Voltage
60
--
--
--
--
V
ΔBVDSS
Breakdown Voltage Temperature
Coefficient
I
0.06
V/°C
/
ΔTJ
IDSS
V
V
DS = 60 V, VGS = 0 V
DS = 48 V, TC = 150°C
--
--
--
--
--
--
--
--
1
μA
μA
nA
nA
Zero Gate Voltage Drain Current
10
IGSSF
IGSSR
VGS = 25 V, VDS = 0 V
VGS = -25 V, VDS = 0 V
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
100
-100
On Characteristics
VGS(th)
VDS = VGS, ID = 250 μA
Gate Threshold Voltage
2.0
--
--
4.0
V
Ω
S
RDS(on)
Static Drain-Source
On-Resistance
V
GS= 10 V, ID =42.5A
0.008 0.010
gFS
VDS = 25 V, ID = 42.5 A
Forward Transconductance
--
54
--
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
--
--
--
3170
1150
165
4120
1500
220
pF
pF
pF
V
DS = 25 V, VGS = 0 V,
Output Capacitance
f = 1.0 MHz
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
--
--
--
--
--
--
--
40
230
175
170
86
90
470
360
350
112
--
ns
ns
VDD = 30 V, ID = 42.5 A,
RG = 25 Ω
ns
(Note 4)
ns
Qg
nC
nC
nC
V
DS = 48 V, ID = 85 A,
Qgs
Qgd
20.5
36
VGS = 10 V
(Note 4)
(Note 5)
--
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
--
--
--
--
--
85
300
1.5
--
A
A
ISM
VSD
trr
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 85 A
GS = 0 V, IS = 85 A,
dIF / dt = 100 A/μs
Drain-Source Diode Forward Voltage
Reverse Recovery Time
--
V
V
70
135
ns
nC
Qrr
Reverse Recovery Charge
--
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. L = 130 μH, I = 85 A, V = 25 V, R = 25 Ω, starting T = 25°C.
AS
DD
G
J
3. I ≤ 85 A, di/dt ≤ 300 A/μs, V
≤ BV starting T = 25°C.
4. Essentially Independent of Operating Temperature.
SD
DD
DSS, J
5. Continuous Drain Current Calculated by Maximum Junction Temperature : Limited by Package.
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©2001 Fairchild Semiconductor Corporation
FQP85N06 Rev. C1
2
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