Typical Characteristics
V
Top: 15.0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
2
10
2
10
5.0 V
Bottom: 4.5 V
1
10
1
10
175℃
25℃
※Notes :
1. VDS = 30V
2. 250μs Pulse Test
※Notes :
1. 250μs Pulse Test
2. T = 25℃
C
-55℃
0
10
0
10
-1
0
10
1
10
2
4
6
8
10
10
VGS, Gate-Source Voltage [V]
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.015
0.012
0.009
0.006
0.003
0.000
2
10
VGS = 10V
VGS = 20V
1
10
※Notes:
1. VGS = 0V
2. 250μs Pulse Test
175℃
25℃
※Note : T = 25℃
J
0
0
50
100
150
200
250
300
350
10
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
ID, Drain Current [A]
V , Source-Drain voltage [V]
SD
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
8000
6000
4000
2000
0
12
10
8
C
iss = Cgs + Cgd (Cds = shorted)
Coss = Cds + C
gd
Crss = C
gd
VDS = 30V
VDS =48V
C
oss
C
iss
※Notes :
1. VGS = 0 V
2. f =1MHz
6
4
C
rss
2
※Note : ID = 85A
0
0
20
40
60
80
100
-1
0
10
10
101
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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©2001 Fairchild Semiconductor Corporation
FQP85N06 Rev. C1
3
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