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FQB10N50CFTM-WS 参数 Datasheet PDF下载

FQB10N50CFTM-WS图片预览
型号: FQB10N50CFTM-WS
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道 QFET® FRFET® MOSFET]
分类和应用: 开关脉冲晶体管
文件页数/大小: 9 页 / 972 K
品牌: ONSEMI [ ONSEMI ]
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Typical Performance Characteristics (Continued)  
Figure 7. Breakdown Voltage Variation  
vs. Temperature  
Figure 8. On-Resistance Variation  
vs. Temperature  
3.0  
1.10  
1.05  
1.00  
2.5  
2.0  
1.5  
1.0  
0.95  
*Notes:  
1. VGS = 0V  
*Notes:  
1. VGS = 10V  
0.5  
2. ID = 250A  
2. ID = 5A  
0.0  
-100  
0.90  
-100  
-50  
0
50  
100  
150  
200  
-50  
0
50  
100  
150  
o
o
TJ, Junction Temperature [ C]  
TJ, Junction Temperature [ C]  
Figure 9. Maximum Safe Operating Area  
Figure 10. Maximum Drain Current  
vs. Case Temperature  
12  
10  
8
100  
50s  
100s  
10  
1ms  
10ms  
6
1
Operation in This Area  
is Limited by R DS(on)  
DC  
4
*Notes:  
1. TC = 25oC  
0.1  
2
2. TJ = 150oC  
3. Single Pulse  
0
25  
0.01  
50  
75  
100  
125  
150  
1
10  
100  
600  
o
TC, Case Temperature [ C]  
VDS, Drain-Source Voltage [V]  
Figure 11. Transient Thermal Response Curve  
1
0.1  
0.5  
0.2  
0.1  
0.05  
PDM  
0.02  
0.01  
t1  
t2  
0.01  
*Notes:  
Single pulse  
1. ZJC(t) = 0.87oC/W Max.  
2. Duty Factor, D= t1/t2  
3. TJM - TC = PDM * ZJC(t)  
1E-3  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
101  
t1, Square Wave Pulse Duration [sec]  
www.onsemi.com  
4
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