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FQB10N50CFTM-WS 参数 Datasheet PDF下载

FQB10N50CFTM-WS图片预览
型号: FQB10N50CFTM-WS
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道 QFET® FRFET® MOSFET]
分类和应用: 开关脉冲晶体管
文件页数/大小: 9 页 / 972 K
品牌: ONSEMI [ ONSEMI ]
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Typical Performance Characteristics  
Figure 1. On-Region Characteristics  
Figure 2. Transfer Characteristics  
50  
30  
VGS = 15.0 V  
10.0 V  
8.0 V  
7.0 V  
6.5 V  
6.0 V  
5.5 V  
5.0 V  
10  
10  
150oC  
-55oC  
25oC  
1
*Notes:  
1. 250s Pulse Test  
2. TC = 25oC  
*Notes:  
1. VDS = 20V  
2. 250s Pulse Test  
0.1  
1
0.8  
2
3
4
5
6
7
8
1
10  
30  
VGS,Gate-Source Voltage[V]  
VDS,Drain-Source Voltage[V]  
Figure 3. On-Resistance Variation vs.  
Drain Current and Gate Voltage  
Figure 4. Body Diode Forward Voltage  
Variation vs. Source Current  
and Temperature  
100  
1.2  
1.0  
0.8  
10  
150oC  
25oC  
VGS = 10V  
0.6  
1
VGS = 20V  
0.4  
*Notes:  
1. VGS = 0V  
*Note: TJ = 25oC  
20 25  
ID, Drain Current [A]  
2. 250s Pulse Test  
0.1  
0.0  
0.2  
0.5  
1.0  
1.5  
0
5
10  
15  
30  
VSD, Body Diode Forward Voltage [V]  
Figure 5. Capacitance Characteristics  
Figure 6. Gate Charge Characteristics  
3500  
3000  
2500  
2000  
1500  
1000  
500  
10  
C
C
C
= C + C (C = shorted)  
gs gd ds  
iss  
= C + C  
ds gd  
= C  
gd  
oss  
rss  
VDS = 100V  
VDS = 250V  
VDS = 400V  
Ciss  
8
*Note:  
1. VGS = 0V  
2. f = 1MHz  
Coss  
6
4
2
Crss  
*Note: ID = 10A  
40 50  
0
0.1  
0
1
10  
30  
0
10  
20  
30  
VDS, Drain-Source Voltage [V]  
Qg, Total Gate Charge [nC]  
www.onsemi.com  
3
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