Package Marking and Ordering Information TC = 25oC unless otherwise noted
Device Marking
Device
Package
Reel Size
Tape Width
Quantity
FQB10N50CF
FQB10N50CFTM-WS
D2-PAK
330mm
24mm
800
Electrical Characteristics
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250A, VGS = 0V, TJ = 25oC
ID = 250A, Referenced to 25oC
500
-
-
-
-
V
BVDSS
/ TJ
Breakdown Voltage Temperature
Coefficient
0.5
V/oC
V
DS = 500V , VGS = 0V
-
-
-
-
-
-
10
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
A
VDS = 400V, TC = 125oC
100
VGS = ±30V, VDS = 0V
±100
nA
On Characteristics
VGS(th)
RDS(on)
gFS
Gate Threshold Voltage
VGS = VDS, ID = 250A
VGS = 10V, ID = 5A
VDS = 20V, ID = 5A
2.0
-
4.0
0.61
-
V
S
Static Drain to Source On Resistance
Forward Transconductance
-
-
0.51
105
Dynamic Characteristics
Ciss
Input Capacitance
-
-
-
-
-
1660
182
17.5
45
2210
240
26
pF
pF
pF
nC
nC
VDS = 25V, VGS = 0V
f = 1MHz
Coss
Crss
Qg(tot)
Qgs
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
60
VDS = 400V, ID = 10A
VGS = 10V
8
-
Qgd
Gate to Drain “Miller” Charge
-
19
-
nC
(Note 4)
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
-
-
-
-
25
47
60
ns
ns
ns
ns
VDD = 250V, ID = 10A
105
285
120
RG = 25
138
55
(Note 4)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
-
-
-
-
-
-
-
10
40
1.4
-
A
A
ISM
VSD
trr
Drain to Source Diode Forward Voltage
Reverse Recovery Time
VGS = 0V, ISD = 10A
-
V
91
220
ns
nC
VGS = 0V, ISD = 10A
dIF/dt = 100A/s
Qrr
Reverse Recovery Charge
-
Notes:
1: Repetitive Rating: Pulse width limited by maximum junction temperature
2: L = 16.5mH, I = 10A, V = 50V, R = 25, Starting T = 25°C
AS
DD
G
J
3:
I
10A, di/dt 200A/s, V BV
, Starting T = 25°C
SD
DD
DSS
J
4: Essentially Independent of Operating Temperature Typical Characteristics
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