典型性能特征
图 7. 饱和电压与 V 的关系
图 8. 饱和电压与 V 的关系
GE
GE
20
20
16
12
8
Common Emitter
TC = 150oC
Common Emitter
TC = 25oC
16
12
8
40A
80A
80A
4
40A
4
IC = 20A
IC = 20A
0
0
4
8
12
16
20
4
8
12
16
20
Gate-Emitter Voltage, VGE [V]
Gate-Emitter Voltage, VGE [V]
图 9. 电容特性
图 10. 栅极电荷特性
15
4000
Common Emitter
TC = 25oC
Common Emitter
VGE = 0V, f = 1MHz
TC = 25oC
12
VCC = 100V
3000
2000
1000
200V
9
6
3
0
Cies
300V
Coes
Cres
0
0.1
0
40
80
120
1
10
30
Collector-Emitter Voltage, VCE [V]
Gate Charge, Qg [nC]
图 11. SOA 特性
图 12. 开启特性与栅极阻抗
300
100
100
10s
tr
100s
1ms
10 ms
DC
10
1
td(on)
10
Common Emitter
VCC = 400V, VGE = 15V
*Notes:
1. TC = 25oC
2. TJ = 150oC
IC = 40A
TC = 25oC
TC = 150oC
0.1
0.01
3. Single Pulse
1
1
10
100
1000
0
10
20
30
40
50
Collector-Emitter Voltage, VCE [V]
Gate Resistance, RG []
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5
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FGH40N60SMDF 修订版 C1
ONSEMI [ ONSEMI ]
