Typical Characteristics TJ = 25 °C unless otherwise noted
5000
1000
10
ID = 14.9 A
Ciss
8
VDD = 15 V
6
VDD = 20 V
VDD = 25 V
4
Coss
2
0
f = 1 MHz
= 0 V
Crss
V
GS
100
0.1
1
10
40
0
10
20
30
40
50
60
VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE (nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
30
10-3
10-5
10-7
10-9
VGS = 0 V
10
TJ = 125 oC
TJ = 25 o
C
TJ = 125 o
C
TJ = 100 o
C
TJ = 25 o
C
1
0.001
0.01
0.1
1
10
100
1000
0
5
10
15
20
25
30
tAV, TIME IN AVALANCHE (ms)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure9. Unclamped Inductive
Switching Capability
Figure 10. Igss vs Vgs
100
10
2000
1000
VGS = 10 V
1 ms
SINGLE PULSE
RθJA = 125 oC/W
A = 25 oC
10 ms
100
10
T
100 ms
1
THIS AREA IS
LIMITED BY r
DS(on)
1 s
SINGLE PULSE
TJ = MAX RATED
0.1
RθJA = 125 oC/W
10 s
DC
A = 25 oC
1
T
0.01
0.5
10-3
10-2
10-1
t, PULSE WIDTH (sec)
1
10
0.01
0.1
1
10
100 200
100
1000
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure 12. Single Pulse Maximum
Power Dissipation
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©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
4
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