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FDS8842NZ 参数 Datasheet PDF下载

FDS8842NZ图片预览
型号: FDS8842NZ
PDF下载: 下载PDF文件 查看货源
内容描述: [N 沟道,PowerTrench® MOSFET,40V,14.9A,7.0mΩ]
分类和应用: 开关光电二极管晶体管
文件页数/大小: 8 页 / 409 K
品牌: ONSEMI [ ONSEMI ]
 浏览型号FDS8842NZ的Datasheet PDF文件第1页浏览型号FDS8842NZ的Datasheet PDF文件第2页浏览型号FDS8842NZ的Datasheet PDF文件第3页浏览型号FDS8842NZ的Datasheet PDF文件第5页浏览型号FDS8842NZ的Datasheet PDF文件第6页浏览型号FDS8842NZ的Datasheet PDF文件第7页浏览型号FDS8842NZ的Datasheet PDF文件第8页  
Typical Characteristics TJ = 25 °C unless otherwise noted  
60  
5
4
3
2
1
0
VGS = 10 V  
PULSE DURATION = 80  
DUTY CYCLE = 0.5% MAX  
µs  
VGS = 3 V  
VGS = 6 V  
50  
40  
VGS = 4.5 V  
VGS = 3.5 V  
VGS = 3.5 V  
PULSE DURATION = 80  
DUTY CYCLE = 0.5% MAX  
µs  
30  
20  
10  
0
VGS = 4 V  
VGS = 4.5 V  
VGS = 10 V  
VGS = 4 V  
VGS = 6 V  
40  
VGS = 3 V  
0
0.3  
VDS  
0.6  
0.9  
1.2  
1.5  
0
10  
20  
30  
50  
60  
,
DRAIN TO SOURCE VOLTAGE (V)  
ID, DRAIN CURRENT (A)  
Figure 1. On-Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
1.8  
20  
ID = 14.9 A  
VGS = 10 V  
PULSE DURATION = 80 µs  
DUTY CYCLE = 0.5% MAX  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
15  
10  
5
ID = 14.9 A  
TJ = 125 o  
C
TJ = 25 oC  
0
-75 -50 -25  
TJ  
0
25 50 75 100 125 150  
2
4
6
8
10  
,
JUNCTION TEMPERATURE ( )  
oC  
VGS, GATE TO SOURCE VOLTAGE (V)  
F i gu re 3 . N orma li zed On - Res is ta nc e  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
60  
50  
40  
30  
20  
10  
0
60  
10  
PULSE DURATION = 80 µs  
DUTY CYCLE = 0.5% MAX  
VGS = 0 V  
VDS = 5 V  
TJ = 150 oC  
TJ = 25 o  
C
TJ = 150 o  
TJ = 25 o  
TJ = -55 oC  
C
1
C
TJ = -55 o  
C
0.1  
0.2  
0
1
2
3
4
0.4  
0.6  
0.8  
1.0  
1.2  
VGS, GATE TO SOURCE VOLTAGE (V)  
VSD, BODY DIODE FORWARD VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
www.fairchildsemi.com  
©2009 Fairchild Semiconductor Corporation  
FDS8842NZ Rev.C  
3
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