Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 µA, VGS = 0 V
40
V
∆BVDSS
∆TJ
Breakdown Voltage Temperature
Coefficient
I
D = 250 µA, referenced to 25 °C
35
mV/°C
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
VDS = 32 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
1
µA
µA
±10
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 µA
1.0
1.9
-6
3.0
V
∆VGS(th)
∆TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = 250 µA, referenced to 25 °C
mV/°C
V
GS = 10 V, ID = 14.9 A
5.6
6.7
8.9
111
7.0
11.6
11.1
rDS(on)
gFS
Static Drain to Source On Resistance
Forward Transconductance
VGS = 4.5 V, ID = 11.6 A
mΩ
VGS = 10 V, ID = 14.9 A, TJ =125 °C
VDS = 5 V, ID = 14.9 A
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
2890
340
220
0.8
3845
455
pF
pF
pF
Ω
VDS = 15 V, VGS = 0 V,
f = 1 MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
330
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
13
7
23
14
54
10
73
38
ns
ns
VDD = 20 V, ID = 14.9 A,
V
GS = 10 V, RGEN = 6 Ω
Turn-Off Delay Time
Fall Time
34
5
ns
ns
Qg
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VGS = 0 V to 10 V
VGS = 0 V to 5 V
52
27
8.6
9.7
nC
nC
nC
nC
VDD = 20 V,
D = 14.9 A
Qg
I
Qgs
Qgd
Drain-Source Diode Characteristics
V
GS = 0 V, IS = 14.9 A
0.8
0.7
26
1.2
1.2
42
VSD
Source to Drain Diode Forward Voltage
V
VGS = 0 V, IS = 2.1 A
trr
Reverse Recovery Time
ns
IF = 14.9 A, di/dt = 100 A/µs
Qrr
Reverse Recovery Charge
15
27
nC
NOTES:
2
1. R
is determined with the device mounted on a 1 in pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
is guaranteed by design while R is determined by
θCA
θJA
θJC
the user's board design.
a) 50 °C/W when mounted on a
1 in pad of 2 oz copper.
b) 125 °C/W when mounted on a
minimum pad.
2
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. The diode connected between the gate and source servers only as protection against ESD. No gate overvoltage rating is implied.
4. Starting T = 25 °C, L = 3 mH, I = 13 A, V = 40 V, V = 10 V.
J
AS
DD
GS
www.fairchildsemi.com
©2009 Fairchild Semiconductor Corporation
FDS8842NZ Rev.C
2
ONSEMI [ ONSEMI ]
