Typical Characteristics TJ = 25 °C unless otherwise noted
10
10000
1000
100
10
ID = 4.4 A
8
Ciss
VDD = 50 V
VDD = 75 V
6
Coss
4
VDD = 100 V
Crss
2
0
f = 1 MHz
GS = 0 V
V
1
0.1
0
4
8
12
16
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
24
18
12
6
30
RθJC = 2.5 oC/W
TJ = 25 o
C
10
VGS = 10 V
TJ = 100 o
C
VGS = 4.5 V
TJ = 125 o
C
Limited by Package
50
0
25
1
0.001
0.01
0.1
1
10
75
100
125
150
TC, CASE TEMPERATURE (oC)
tAV, TIME IN AVALANCHE (ms)
Figure9. U n c l a m p e d I n d u c t i v e
Switching Capability
Figure10. Maximum Continuous Drain
Current vs Case Temperature
100
10
10000
SINGLE PULSE
RθJC = 2.5 oC/W
TC = 25 oC
10 us
1000
100
10
THIS AREA IS
LIMITED BY rDS(on)
100 us
1 ms
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 2.5 oC/W
TC = 25 oC
10 ms
DC
0.1
CURVE BENT TO
MEASURED DATA
0.01
10-5
10-4
10-3
t, PULSE WIDTH (sec)
10-2
10-1
0.1
1
10
100
500
1
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
Figure12. Single Pulse Maximum
Power Dissipation
©2013 Fairchild Semiconductor Corporation
FDMS86252L Rev.C2
www.fairchildsemi.com
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