Typical Characteristics TJ = 25 °C unless otherwise noted
30
3.0
2.5
2.0
1.5
1.0
0.5
VGS = 10 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
24
18
12
6
VGS = 6 V
VGS = 2.5 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 3.5 V
VGS = 3 V
VGS = 10 V
VGS = 6 V
18
VGS = 4.5 V
12
VGS = 2.5 V
1
0
0
2
3
4
5
0
6
24
30
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 1. On Region Characteristics
Figure2. N o r m a l i z e d O n - R e s i s ta n c e
vs Drain Current and Gate Voltage
150
2.4
PULSE DURATION = 80 μs
ID = 4.4 A
DUTY CYCLE = 0.5% MAX
VGS = 10 V
2.0
1.6
1.2
0.8
0.4
ID = 4.4 A
120
90
TJ = 125 o
C
60
TJ = 25 o
C
30
2
4
6
8
10
-75 -50 -25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure4. On-Resistance vs Gate to
Source Voltage
Figure 3. Normalized On Resistance
vs Junction Temperature
30
30
VGS = 0 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
10
24
TJ = 150 o
C
VDS = 5 V
1
18
TJ = 150 o
C
0.1
12
6
TJ = 25 o
C
TJ = 25 o
C
0.01
0.001
TJ = -55 o
C
TJ = -55 o
C
0
1
2
3
4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure6. Source to Drain Diode
Forward Voltage vs Source Current
©2013 Fairchild Semiconductor Corporation
FDMS86252L Rev.C2
www.fairchildsemi.com
3
ONSEMI [ ONSEMI ]
