Typical Characteristics TJ = 25°C unless otherwise noted
10
1000
100
10
I
D
= -3.1A
C
iss
V
= -8V
DD
8
6
4
2
0
V
= -10V
DD
C
oss
V
DD
= -12V
C
rss
f = 1MHz
= 0V
V
GS
0
2
4
6
8
0.1
1
10
30
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Q , GATE CHARGE(nC)
g
Figure 7. Gate Charge Characteristics
Figure8. C a p a c i t a n c e v s D r a i n
to Source Voltage
20
10
100
10
VGS = -4.5V
FOR TEMPERATURES
ABOVE 25 C DERATE PEAK
CURRENT AS FOLLOWS:
100us
o
1ms
150 – T
A
1
0.1
-----------------------
I = I
25
125
SINGLE PULSE
J
10ms
o
T
= MAX RATED
T
= 25 C
A
100ms
1s
10s
DC
o
R
T
=173 C/W
TJA
= 25O
C
A
THIS AREA IS
LIMITED BY rDS(on)
1
SINGLE PULSE
0.6
0.01
10-4
10-3
10-2
t, PULSE WIDTH (s)
10-1
100
101
102
103
50
0.1
1
10
-V , DRAIN to SOURCE VOLTAGE (V)
DS
Figure 9. Forward Bias Safe
Operating Area
Figure10. Single Pulse Maximum
Power Dissipation
1
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.1
0.01
0.05
0.02
0.01
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZTJA x RTJA + TA
SINGLE PULSE
0.001
10-4
10-3
10-2
10-1
100
101
102
t, RECTANGULAR PULSE DURATION (s)
Figure 11. Transient Thermal Response Curve
FDMA1025P Rev.B5
www.fairchildsemi.com
5
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