July 2014
FDMA1025P
Dual P-Channel PowerTrench® MOSFETꢀ
–20V, –3.1A, 155m:
Features
General Description
Max rDS(on) = 155m: at VGS = –4.5V, ID = –3.1A
This device is designed specifically as a single package solution
for the battery charge switch in cellular handset and other ultra -
portable applications. It features two independent P-Channel
MOSFETs with low on-state resistance for minimum conduction
losses. When connected in the typical common source
configuration, bi-directional current flow is possible.
Max rDS(on) = 220m: at VGS = –2.5V, ID = –2.3A
Low profile - 0.8mm maximum - in the new package MicroFET
2X2 mm
RoHS Compliant
The MicroFET 2X2 package offers exceptional thermal
performance for its physical size and well suited to linear mode
applications.
Free from halogenated compounds and antimony
oxides
Application
DC - DC Conversion
PIN 1
S1 G1 D2
1
2
3
6
5
6
5
4
1
S1
G1
D2
D1
D2
D1
G2
2
4
S2
3
D1 G2 S2
MicroFET 2X2
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
Parameter
Ratings
–20
12
–3.1
–6
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Pulsed
(Note 1a)
ID
A
Power Dissipation for Single Operation
Power Dissipation
(Note 1a)
(Note 1b)
1.4
0.7
PD
W
TJ, TSTG
Operating and Storage Junction Temperature Range
–55 to +150
°C
Thermal Characteristics
RTJA
RTJA
RTJA
RTJA
Thermal Resistance Single Operation, Junction to Ambient
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1d)
86
173
69
Thermal Resistance Single Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
Thermal Resistance Dual Operation, Junction to Ambient
°C/W
151
Package Marking and Ordering Information
Device Marking
Device
FDMA1025P
Package
MicroFET 2X2
Reel Size
7’’
Tape Width
Quantity
3000 units
025
8mm
1
©2010 Fairchild Semiconductor Corporation
FDMA1025P Rev.B5
www.fairchildsemi.com
ONSEMI [ ONSEMI ]
