Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = –250PA, VGS = 0V
–20
V
'BVDSS
ꢀꢀꢀ'TJ
Breakdown Voltage Temperature
Coefficient
ID = –250PA, referenced to 25°C
VDS = –16V,
14
mV/°C
–1
IDSS
IGSS
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
PA
VGS = 0V
TJ = 125°C
–100
VGS 12V, VDS = 0V
=
100
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = –250PA
–0.4
–1.5
V
–0.9
–3.8
ꢀ'VGS(th)
ꢀꢀꢀ'TJ
Gate to Source Threshold Voltage
Temperature Coefficient
I
D = –250PA, referenced to 25°C
GS = –4.5V, ID = –3.1A
mV/°C
V
88
155
220
220
rDS(on)
gFS
Drain to Source On Resistance
Forward Transconductance
VGS = –2.5V, ID = –2.3A
VGS = –4.5V, ID = –3.1A,TJ = 125°C
VDS = –5V, ID = –3.1A
144
121
6.2
m:
S
Dynamic Characteristics
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
340
80
45
450
105
70
pF
pF
pF
VDS = –10V, VGS = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
5
10
26
24
16
4.8
ns
ns
ns
V
DD = –10V, ID = –3.1A
14
13
8
3.4
0.8
1.0
VGS = –4.5V, RGEN = 6:
ns
Qg(TOT)
Qgs
Qgd
Total Gate Charge at 4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VGS = 0V to –4.5V
nC
nC
nC
V
DD = –10V
ID = –3.1A
Drain-Source Diode Characteristics
IS
Maximum Continuous Source-Drain Diode Forward
A
V
ns
nC
–1.1
–1.2
26
VSD
trr
Source to Drain Diode Forward Voltage VGS = 0V, IS = –1.1A (Note 2)
Reverse Recovery Time
IF = –3.1A, di/dt = 100A/Ps
Reverse Recovery Charge
–0.8
17
10
Qrr
15
FDMA1025P Rev.B5
www.fairchildsemi.com
2
ONSEMI [ ONSEMI ]
