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FDMA1025P 参数 Datasheet PDF下载

FDMA1025P图片预览
型号: FDMA1025P
PDF下载: 下载PDF文件 查看货源
内容描述: [双 P 沟道,Power Trench® MOSFET,-20V,-3.1A,155mΩ]
分类和应用: 脉冲光电二极管晶体管
文件页数/大小: 9 页 / 504 K
品牌: ONSEMI [ ONSEMI ]
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Typical Characteristics TJ = 25°C unless otherwise noted  
6
5
4
3
2
1
0
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
5
VGS = -4.5V  
VGS = -1.8V  
VGS = -3.5V  
4
VGS = -2.5V  
3
VGS = -2.5V  
VGS = -3.5V  
VGS = -1.8V  
2
1
0
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
VGS = -4.5V  
0
1
2
3
0
1
2
3
4
5
6
-V , DRAIN TO SOURCE VOLTAGE (V)  
-ID, DRAIN CURRENT(A)  
DS  
Figure 1. On Region Characteristics  
Figure2. N o r m a l i z e d O n - R e s i s ta n c e  
vs Drain Current and Gate Voltage  
500  
1.6  
ID =-3.1A  
GS = -4.5V  
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
V
400  
300  
200  
100  
0
1.4  
1.2  
1.0  
0.8  
0.6  
ID = -3.1A  
TJ = 125oC  
TJ = 25oC  
2
3
4
5
6
-50 -25  
0
25  
50  
75  
100 125 150  
TJ, JUNCTION TEMPERATURE (oC)  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 3. Normalized On Resistance  
vs Junction Temperature  
Figure4. On-Resistance vs Gate to  
Source Voltage  
10  
1
6
V
GS  
= 0V  
PULSE DURATION = 80Ps  
DUTY CYCLE = 0.5%MAX  
5
4
3
2
1
0
T
J
= 150oC  
0.1  
T
J
= 25oC  
0.01  
0.001  
0.0001  
T
J
= 150oC  
1.5  
T
= 25oC  
J
T
J
= -55oC  
T
J
= -55oC  
0.0  
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
1.0  
2.0  
2.5  
3.0  
-V , BODY DIODE FORWARD VOLTAGE (V)  
SD  
-VGS, GATE TO SOURCE VOLTAGE (V)  
Figure 5. Transfer Characteristics  
Figure6. Source to Drain Diode  
Forward Voltage vs Source Current  
FDMA1025P Rev.B5  
www.fairchildsemi.com  
4
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