FCPF190N65FL1−F154
TYPICAL PERFORMANCE CHARACTERISTICS
100
100
10
1
V
= 20 V
V
GS
=15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
DS
250 ꢁ s Pulse Test
150°C
6.0 V
5.5 V
10
25°C
−55°C
250 ꢁ s Pulse Test
= 25°C
T
C
1
0.3
1
10 15
3
4
5
6
7
8
V
DS
, Drain−Source Voltage (V)
V
GS
, Gate−Source Voltage (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.3
0.2
0.1
0.0
100
10
1
V
= 0 V
T
C
= 25°C
GS
250 ꢁ s Pulse Test
V
V
= 10 V
= 20 V
GS
150°C
25°C
GS
0.1
0
14
28
42
56
70
0.0
0.5
1.0
1.5
2.0
I , Drain Current (A)
D
V
SD
, Body Diode Forward Voltage (V)
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current and
Temperature
Figure 3. On−Resistance Variation vs.
Drain Current and Gate Voltage
10
50000
10000
1000
100
V
V
V
= 130 V
= 325 V
= 520 V
DS
DS
DS
C
8
6
4
2
0
iss
C
oss
C
rss
10
1
V
= 0 V
GS
f = 1 MHz
C
C
C
= C + C (C = shorted)
iss
gs gd ds
= C + C
gd
oss
rss
ds
= C
gd
I
D
= 10 A
52 65
0.1
0
13
26
39
0.1
1
10
100
1000
Q , Total Gate Charge (nC)
g
V
DS
, Drain−Source Voltage (V)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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