MOSFET – N-Channel,
SUPERFET) II, FRFET)
650 V, 20.6 A, 190 mW
FCPF190N65FL1-F154
Description
SUPERFET II MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provide superior switching performance, and
withstand extreme dv/dt rate. Consequently, SUPERFET II MOSFET
is very suitable for the various power system for miniaturization and
higher efficiency. SUPERFET II FRFET MOSFET’s optimized
reverse recovery performance of body diode can remove additional
component and improve system reliability.
www.onsemi.com
V
R
MAX
I MAX
D
DSS
DS(ON)
650 V
190 mꢀ @ 10 V
20.6 A
D
Features
G
• 700 V @ T = 150°C
J
• R
= 168 mꢀ (Typ.)
DS(on)
• Ultra Low Gate Charge (Typ. Q = 60 nC)
g
S
• Low Effective Output Capacitance (Typ. C
• 100% Avalanche Tested
= 304 pF)
oss(eff.)
MOSFET
• These Devices are Pb−Free and are RoHS Compliant
Applications
• Computing / Display Power Supplies
• Telecom / Server Power Supplies
• Industrial Power Supplies
G
D
S
TO−220F Ultra Narrow Lead
CASE 221BN
• Lighting / Charger / Adapter
MARKING DIAGRAM
$Y&Z&3&K
FCPF
190N65F
$Y
&Z
&3
&K
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
FCPF190N65F
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2020
1
Publication Order Number:
FCPF190N65FL1−F154/D
December, 2020 − Rev. 0
ONSEMI [ ONSEMI ]
